Samsung creates 512 GB flash storage for next-gen mobile devicesBy Robin-Leigh Chetty 6 December 2017 | Categories: news
As smartphones and tablets become the primary screen for many a consumer, there is a growing need for more storage. It's something that the cloud aims to take care of, but manufacturers still need to provide on-device solutions as well.
To that end, Samsung has announced a new 512 GB embedded Universal Flash Storage (eUFS) solution for mobile devices.
Along with the increased storage size, the South Korean manufacturer has utilised a 64 layer V-NAND construction for this memory chip. Added to this, Samsung has noted that the new eUFS solution will find its way onto the company's upcoming flagship smartphones and tablets. As such, we could see it feature as a larger internal storage model option on the Galaxy S9 next year.
“The new Samsung 512 GB eUFS provides the best embedded storage solution for next-generation premium smartphones by overcoming potential limitations in system performance that can occur with the use of microSD cards,” said Jaesoo Han, executive vice president of memory sales & marketing at Samsung Electronics.
As far as reading and writing goes, the new 512 GB eUFS is capable of up to 860 Mbps and 255 Mbps respectively. Other capabilities include transferring 5 GB worth of Full HD video to an SSD in roughly six seconds, as well as proving eight times faster than the traditional microSD card.
Whether that means Samsung will try to ditch the microSD slot on its next flagship phone remains to be seen, having yielded mixed reactions when it did so on the Galaxy S6.
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